MS11-L MOS memory - Revision history

Jnc: Avoid dab

2022-09-21T19:15:14Z

Avoid dab

Jnc: /* External links */ +FMPS, manuals

2022-04-03T10:23:42Z

‎External links: +FMPS, manuals

Jnc: typo

2020-01-26T12:37:44Z

typo

Jnc: +Image

2020-01-25T18:53:56Z

+Image

Jnc: current rqmts

2020-01-25T15:24:31Z

current rqmts

Jnc: Parity

2020-01-25T13:03:15Z

Parity

Jnc: Dual voltage

2020-01-22T14:18:49Z

Dual voltage

Jnc: +cat

2018-10-16T23:29:57Z

+cat

Jnc: clarify

2018-10-16T16:13:30Z

clarify

Jnc: Kinda important, move up

2018-05-22T20:28:25Z

Kinda important, move up

@@ Line 5: / Line 5: @@
 Fully populated with 16Kx1 chips, it is known as the '''MS11-LD''', and holds 256K [[byte]]s. The quarter-, half- and three-quarter-populated versions are the '''MS11-LA''', '''-LB''' and '''-LC''', respectively; with 64KB, 128KB and 192KB.
-It plugs into a [[Modified UNIBUS Device|MUD]] [[backplane]] (only; not [[Small Peripheral Controller|SPC]]). It is a single [[DEC card form factor|hex]] card, the M7891, so it cannot go in the end slots of the backplane.
+It plugs into a [[Modified UNIBUS Device|MUD]] [[backplane]] (''only''; not [[Small Peripheral Controller|SPC]]). It is a single [[DEC card form factor|hex]] card, the M7891, so it cannot go in the end slots of the backplane.
-The [[access time]] is 385 nsec (typical; 1025 nsec maximum on [[refresh]] conflict), and the [[cycle time]] is 510 nsec (1050 nsec maximum on refresh conflict). Refresh time is 570 nsec (typical; 610 nsec maximum); the time for a complete refresh pass is 14.5 μsec (typical), 13.5 μsec (minimum).
+The [[access time]] is 385 nsec (typical; 1025 nsec maximum on [[memory refresh]] conflict), and the [[cycle time]] is 510 nsec (1050 nsec maximum on refresh conflict). Refresh time is 570 nsec (typical; 610 nsec maximum); the time for a complete refresh pass is 14.5 μsec (typical), 13.5 μsec (minimum).
 It can use ''either'' +/-15V or +/-12V to power the memory chips (in some MUD slots, e.g. in the [[BA11-A mounting box]], the '15V' pins provide 12V). The board has provision to use battery backup power to retain data during a power outage. Power requirements are 1.5-1.8A of +5V, 1-1.3A of +5VBB, 9-20mA of -12/-15V (depending on size, i.e. number of MOS memory chips), and 485-700 mA of +12/+15 (when active; depending on size).

@@ Line 9: / Line 9: @@
 The [[access time]] is 385 nsec (typical; 1025 nsec maximum on [[refresh]] conflict), and the [[cycle time]] is 510 nsec (1050 nsec maximum on refresh conflict). Refresh time is 570 nsec (typical; 610 nsec maximum); the time for a complete refresh pass is 14.5 μsec (typical), 13.5 μsec (minimum).
-It can use ''either'' +/-15V or +/-12V to power the memory chips (in some MUD slots, the 15V pins provide 12V). The board has provision to use battery backup power to retain data during a power outage. Power requirements are 1.5-1.8A of +5V, 1-1.3A of +5VBB, 9-20mA of -12/-15V (depending on size, i.e. number of MOS memory chips), and 485-700 mA of +12/+15 (when active; depending on size).
+It can use ''either'' +/-15V or +/-12V to power the memory chips (in some MUD slots, e.g. in the [[BA11-A mounting box]], the '15V' pins provide 12V). The board has provision to use battery backup power to retain data during a power outage. Power requirements are 1.5-1.8A of +5V, 1-1.3A of +5VBB, 9-20mA of -12/-15V (depending on size, i.e. number of MOS memory chips), and 485-700 mA of +12/+15 (when active; depending on size).
-{{PDP-11}}
+==External links==
 [[Category: UNIBUS Memories]]
 [[Category: EUB Memories]]

@@ Line 1: / Line 1: @@
 [[Image:MS11-L.jpg|300px|thumb|right|MS11-L board]]
-The '''MS11-L''' was final [[UNIBUS]] [[main memory]] from [[Digital Equipment Corporation|DEC]]; a single card can hold enough [[Metal Oxide Semiconductor|MOS]] [[Dynamic RAM|DRAM]] [[integrated circuit|chips]] to fill the entire UNIBUS [[address space]]. It had a [[jumper]] option to enable use on an [[Extended UNIBUS]]. Configuration is by [[Dual Inline Package|DIP]] switches. It used on-board[[parity]] for error detection.
+The '''MS11-L''' was final [[UNIBUS]] [[main memory]] from [[Digital Equipment Corporation|DEC]]; a single card can hold enough [[Metal Oxide Semiconductor|MOS]] [[Dynamic RAM|DRAM]] [[integrated circuit|chips]] to fill the entire UNIBUS [[address space]]. It had a [[jumper]] option to enable use on an [[Extended UNIBUS]]. Configuration is by [[Dual Inline Package|DIP]] switches. It used on-board [[parity]] for error detection.
 Fully populated with 16Kx1 chips, it is known as the '''MS11-LD''', and holds 256K [[byte]]s. The quarter-, half- and three-quarter-populated versions are the '''MS11-LA''', '''-LB''' and '''-LC''', respectively; with 64KB, 128KB and 192KB.

← Older revision		Revision as of 18:53, 25 January 2020
Line 1:		Line 1:
		+	[[Image:MS11-L.jpg\|300px\|thumb\|right\|MS11-L board]]
		+
	The '''MS11-L''' was final [[UNIBUS]] [[main memory]] from [[Digital Equipment Corporation\|DEC]]; a single card can hold enough [[Metal Oxide Semiconductor\|MOS]] [[Dynamic RAM\|DRAM]] [[integrated circuit\|chips]] to fill the entire UNIBUS [[address space]]. It had a [[jumper]] option to enable use on an [[Extended UNIBUS]]. Configuration is by [[Dual Inline Package\|DIP]] switches. It used on-board[[parity]] for error detection.		The '''MS11-L''' was final [[UNIBUS]] [[main memory]] from [[Digital Equipment Corporation\|DEC]]; a single card can hold enough [[Metal Oxide Semiconductor\|MOS]] [[Dynamic RAM\|DRAM]] [[integrated circuit\|chips]] to fill the entire UNIBUS [[address space]]. It had a [[jumper]] option to enable use on an [[Extended UNIBUS]]. Configuration is by [[Dual Inline Package\|DIP]] switches. It used on-board[[parity]] for error detection.

@@ Line 1: / Line 1: @@
-The '''MS11-L''' was final [[UNIBUS]] [[main memory]] from [[Digital Equipment Corporation|DEC]]; a single card can hold enough [[Metal Oxide Semiconductor|MOS]] [[Dynamic RAM|DRAM]] [[integrated circuit|chips]] to fill the entire UNIBUS [[address space]]. It had a [[jumper]] option to enable use on an [[Extended UNIBUS]]. Configuration is by [[Dual Inline Package|DIP]] switches. It used [[parity]] for error detection.
+The '''MS11-L''' was final [[UNIBUS]] [[main memory]] from [[Digital Equipment Corporation|DEC]]; a single card can hold enough [[Metal Oxide Semiconductor|MOS]] [[Dynamic RAM|DRAM]] [[integrated circuit|chips]] to fill the entire UNIBUS [[address space]]. It had a [[jumper]] option to enable use on an [[Extended UNIBUS]]. Configuration is by [[Dual Inline Package|DIP]] switches. It used on-board[[parity]] for error detection.
-Fully populated with 16Kx1 chips, it is known as the '''MS11-LD''', and holds 256K [[byte]]s. The quarter-, half- and three-quarter-populated versions are the '''MS11-LA''', '''-LB''' and '''-LC''', respectively; with 64KB, 128KB and 192KB. All versions include on-board [[parity]] support.
+Fully populated with 16Kx1 chips, it is known as the '''MS11-LD''', and holds 256K [[byte]]s. The quarter-, half- and three-quarter-populated versions are the '''MS11-LA''', '''-LB''' and '''-LC''', respectively; with 64KB, 128KB and 192KB.
 It plugs into a [[Modified UNIBUS Device|MUD]] [[backplane]] (only; not [[Small Peripheral Controller|SPC]]). It is a single [[DEC card form factor|hex]] card, the M7891, so it cannot go in the end slots of the backplane.
@@ Line 7: / Line 7: @@
 The [[access time]] is 385 nsec (typical; 1025 nsec maximum on [[refresh]] conflict), and the [[cycle time]] is 510 nsec (1050 nsec maximum on refresh conflict). Refresh time is 570 nsec (typical; 610 nsec maximum); the time for a complete refresh pass is 14.5 μsec (typical), 13.5 μsec (minimum).
-It can use ''either'' +/-15V or +/-12V to power the memory chips (in some MUD slots, the 15V pins provide 12V). The board has provision to use battery backup power to retain data during a power outage.
+It can use ''either'' +/-15V or +/-12V to power the memory chips (in some MUD slots, the 15V pins provide 12V). The board has provision to use battery backup power to retain data during a power outage. Power requirements are 1.5-1.8A of +5V, 1-1.3A of +5VBB, 9-20mA of -12/-15V (depending on size, i.e. number of MOS memory chips), and 485-700 mA of +12/+15 (when active; depending on size).
 {{PDP-11}}

← Older revision		Revision as of 23:29, 16 October 2018
Line 12:		Line 12:

	[[Category: UNIBUS Memories]]		[[Category: UNIBUS Memories]]
		+	[[Category: EUB Memories]]