MS11-M MOS memory - Revision history

Jnc: interleaving cleanup

2023-07-30T18:02:34Z

interleaving cleanup

Jnc: Avoid dab

2022-09-21T19:16:51Z

Avoid dab

Jnc: more detail on -12V; manual, FMPS

2022-01-16T11:40:16Z

more detail on -12V; manual, FMPS

Jnc: +Image

2020-01-25T18:54:49Z

+Image

Jnc: current rqmts

2020-01-25T15:40:13Z

current rqmts

Jnc: note MOS

2020-01-22T14:09:39Z

note MOS

Jnc: Correct refresh conflict increase

2018-10-17T00:26:37Z

Correct refresh conflict increase

Jnc: Add perf nos

2018-10-16T23:30:57Z

Add perf nos

Jnc: Fairly complete

2018-10-16T03:33:23Z

Fairly complete

New page

The '''MS11-M''' (M8722) is a [[Dynamic RAM|DRAM]] [[main memory]] card; it can be configured as either [[UNIBUS]] memory, or [[Extended UNIBUS]].

When configured for UNIBUS use, it is plugged into an [[Modified UNIBUS Device|MUD]] [[backplane]] slot. '''''Note:''''' The MS11-M uses power [[voltage]]s of +12V/-12V, unlike the normal +15V/-15V supplied by an MUD/SPC slot. In general, the MS11-M thus cannot actually be plugged into most MUD/SPC backplanes.

When configured as an EUB card, it can only be plugged into the EUB slots on the [[PDP-11/24]] or [[PDP-11/44]] backplanes (both of which provide the correct voltages).

It is a [[DEC card form factor|hex-height]] card; the MS11-MB holds 256 Kbytes when fully populated with 16Kx1 DRAM [[integrated circuit|chips]]; the half-populated MS11-MA contains 128 Kbytes.

It has [[Error-correcting code|ECC]] which automagically corrects single-[[bit]] errors, (at a 70 nsec penalty in [[access time|response time]] when an error occurs) and detects double-bit errors. The memory is arranged as 4 banks, each 32 data bits wide, with 7 additional bits for the ECC.

On power-on, the system is frozen (via negation of the ACLO UNIBUS signal) for up to 451 msec while the entire memory is cleared, to prevent spurious ECC errors. For [[diagnostic]] purposes, the ECC can be disabled, and there are also means for the CPU to read/write the ECC bits directly.

[[Category: UNIBUS Memories]]
[[Category: EUB Memories]]

@@ Line 15: / Line 15: @@
 ==Power==
-Power requirements are 3.8-4.8A of +5V; 1.2-1.5A of +5VBB; 25-50mA of -12V, on pin AS1 (depending on size, i.e. number of MOS memory chips); and .55-1 A of +12V, on pin AR1 (when active; depending on size). Note that if two MS11-M boards are [[interleaving|interleaved]], the +12V current draw can be doubled.
+Power requirements are 3.8-4.8A of +5V; 1.2-1.5A of +5VBB; 25-50mA of -12V, on pin AS1 (depending on size, i.e. number of MOS memory chips); and .55-1 A of +12V, on pin AR1 (when active; depending on size). Note that if two MS11-M boards are [[memory interleaving|interleaved]], the +12V current draw can be doubled.
 The board has provision to use battery backup power to retain data during a power outage.
 ==External links==

@@ Line 9: / Line 9: @@
 It has [[Error-correcting code|ECC]] which automagically corrects single-[[bit]] errors, (at a 70 nsec penalty in [[access time|response time]] when an error occurs) and detects double-bit errors. The memory is arranged as 4 banks, each 32 data bits wide, with 7 additional bits for the ECC. On power-on, the system is frozen (via negation of the ACLO UNIBUS signal) for up to 451 msec while the entire memory is cleared, to prevent spurious ECC errors. For [[diagnostic]] purposes, the ECC can be disabled, and there are also means for the CPU to read/write the ECC bits directly.
-The [[access time]] is normally 490-525 nsec (typical/max; 620-675 nsec extra on [[refresh]] conflict), and the [[cycle time]] is 950-1000 nsec (write cycle; refresh conflict additional as above). Refresh time is 620 nsec (typical; 675 nsec maximum); the time for a complete refresh pass is 12.5 μsec (typical), or 13.75 μsec (maximum).
+The [[access time]] is normally 490-525 nsec (typical/max; 620-675 nsec extra on [[memory refresh]] conflict), and the [[cycle time]] is 950-1000 nsec (write cycle; refresh conflict additional as above). Refresh time is 620 nsec (typical; 675 nsec maximum); the time for a complete refresh pass is 12.5 μsec (typical), or 13.75 μsec (maximum).
 It is a [[DEC card form factor|hex-height]] card; the '''MS11-MB''' holds 256 Kbytes when fully populated with 16Kx1 DRAM [[integrated circuit|chips]]; the half-populated '''MS11-MA''' contains 128 Kbytes.

@@ Line 1: / Line 1: @@
 [[Image:MS11-M.jpg|300px|thumb|right|MS11-M board]]
-The '''MS11-M''' ('''M8722''') is a [[Metal Oxide Semiconductor|MOS]] [[Dynamic RAM|DRAM]] [[main memory]] card; it can be configured as either [[UNIBUS]] memory, or [[Extended UNIBUS]].
+The '''MS11-M''' ('''M8722''') is a [[Metal Oxide Semiconductor|MOS]] [[Dynamic RAM|DRAM]] [[main memory]] card; it can theoretically be configured as either [[UNIBUS]] memory, or [[Extended UNIBUS]]. In actuality, the MS11-M uses power [[voltage]]s of +12V/-12V, unlike the normal +15V/-15V supplied by most DEC [[backplane]]s, and thus can be used in only a few installations.
-When configured for UNIBUS use, it is plugged into an [[Modified UNIBUS Device|MUD]] [[backplane]] slot. '''''Note:''''' The MS11-M uses power [[voltage]]s of +12V/-12V, unlike the normal +15V/-15V supplied by an MUD slot. In general, the MS11-M thus cannot actually be plugged into most MUD backplanes.
+When configured for UNIBUS use, it is plugged into an [[Modified UNIBUS Device|MUD]] [[backplane]] slot. '''''Note:''''' a MUD slot does not usually provide +12V/-12V; in general, the MS11-M thus cannot actually be plugged into most MUD backplanes.
-When configured as an EUB card, it can only be plugged into the EUB slots on the [[PDP-11/24]] or [[PDP-11/44]] backplanes (both of which provide the correct voltages). Configuration is mostly by [[Dual Inline Package|DIP]] switches, along with two [[jumper]]s.
+When configured as an EUB card, it can only be plugged into the EUB slots on the backplanes of the [[PDP-11/24]] (in the [[BA11-A mounting box]] '''''only''''') and the [[PDP-11/44]], which provide the correct voltages. Configuration is mostly by [[Dual Inline Package|DIP]] switches, along with two [[jumper]]s.
-It is a [[DEC card form factor|hex-height]] card; the MS11-MB holds 256 Kbytes when fully populated with 16Kx1 DRAM [[integrated circuit|chips]]; the half-populated MS11-MA contains 128 Kbytes.
+It has [[Error-correcting code|ECC]] which automagically corrects single-[[bit]] errors, (at a 70 nsec penalty in [[access time|response time]] when an error occurs) and detects double-bit errors. The memory is arranged as 4 banks, each 32 data bits wide, with 7 additional bits for the ECC. On power-on, the system is frozen (via negation of the ACLO UNIBUS signal) for up to 451 msec while the entire memory is cleared, to prevent spurious ECC errors. For [[diagnostic]] purposes, the ECC can be disabled, and there are also means for the CPU to read/write the ECC bits directly.
-The [[access time]] is 490-525 nsec (typical/max; 620-675 nsec extra on [[refresh]] conflict), and the [[cycle time]] is 950-1000 nsec (write cycle; refresh conflict additional as above). Refresh time is 620 nsec (typical; 675 nsec maximum); the time for a complete refresh pass is 12.5 μsec (typical), or 13.75 μsec (maximum).
+The [[access time]] is normally 490-525 nsec (typical/max; 620-675 nsec extra on [[refresh]] conflict), and the [[cycle time]] is 950-1000 nsec (write cycle; refresh conflict additional as above). Refresh time is 620 nsec (typical; 675 nsec maximum); the time for a complete refresh pass is 12.5 μsec (typical), or 13.75 μsec (maximum).
-It has [[Error-correcting code|ECC]] which automagically corrects single-[[bit]] errors, (at a 70 nsec penalty in [[access time|response time]] when an error occurs) and detects double-bit errors. The memory is arranged as 4 banks, each 32 data bits wide, with 7 additional bits for the ECC.
+It is a [[DEC card form factor|hex-height]] card; the '''MS11-MB''' holds 256 Kbytes when fully populated with 16Kx1 DRAM [[integrated circuit|chips]]; the half-populated '''MS11-MA''' contains 128 Kbytes.
-On power-on, the system is frozen (via negation of the ACLO UNIBUS signal) for up to 451 msec while the entire memory is cleared, to prevent spurious ECC errors. For [[diagnostic]] purposes, the ECC can be disabled, and there are also means for the CPU to read/write the ECC bits directly.
+==Power==
-The board has provision to use battery backup power to retain data during a power outage. Power requirements are 3.8-4.8A of +5V, 1.2-1.5A of +5VBB, 25-50mA of -12V (depending on size, i.e. number of MOS memory chips), and .55-1 A of +12 (when active; depending on size). Note that if two MS11-M boards are [[interleaving|interleaved]], the +12V current draw can be doubled.
+Power requirements are 3.8-4.8A of +5V; 1.2-1.5A of +5VBB; 25-50mA of -12V, on pin AS1 (depending on size, i.e. number of MOS memory chips); and .55-1 A of +12V, on pin AR1 (when active; depending on size). Note that if two MS11-M boards are [[interleaving|interleaved]], the +12V current draw can be doubled.
 [[Category: UNIBUS Memories]]
 [[Category: EUB Memories]]

← Older revision		Revision as of 18:54, 25 January 2020
Line 1:		Line 1:
		+	[[Image:MS11-M.jpg\|300px\|thumb\|right\|MS11-M board]]
		+
	The '''MS11-M''' ('''M8722''') is a [[Metal Oxide Semiconductor\|MOS]] [[Dynamic RAM\|DRAM]] [[main memory]] card; it can be configured as either [[UNIBUS]] memory, or [[Extended UNIBUS]].		The '''MS11-M''' ('''M8722''') is a [[Metal Oxide Semiconductor\|MOS]] [[Dynamic RAM\|DRAM]] [[main memory]] card; it can be configured as either [[UNIBUS]] memory, or [[Extended UNIBUS]].

@@ Line 1: / Line 1: @@
-The '''MS11-M''' (M8722) is a [[Metal Oxide Semiconductor|MOS]] [[Dynamic RAM|DRAM]] [[main memory]] card; it can be configured as either [[UNIBUS]] memory, or [[Extended UNIBUS]].
+The '''MS11-M''' ('''M8722''') is a [[Metal Oxide Semiconductor|MOS]] [[Dynamic RAM|DRAM]] [[main memory]] card; it can be configured as either [[UNIBUS]] memory, or [[Extended UNIBUS]].
 When configured for UNIBUS use, it is plugged into an [[Modified UNIBUS Device|MUD]] [[backplane]] slot. '''''Note:''''' The MS11-M uses power [[voltage]]s of +12V/-12V, unlike the normal +15V/-15V supplied by an MUD slot. In general, the MS11-M thus cannot actually be plugged into most MUD backplanes.
-When configured as an EUB card, it can only be plugged into the EUB slots on the [[PDP-11/24]] or [[PDP-11/44]] backplanes (both of which provide the correct voltages).
+When configured as an EUB card, it can only be plugged into the EUB slots on the [[PDP-11/24]] or [[PDP-11/44]] backplanes (both of which provide the correct voltages). Configuration is mostly by [[Dual Inline Package|DIP]] switches, along with two [[jumper]]s.
 It is a [[DEC card form factor|hex-height]] card; the MS11-MB holds 256 Kbytes when fully populated with 16Kx1 DRAM [[integrated circuit|chips]]; the half-populated MS11-MA contains 128 Kbytes.
@@ Line 13: / Line 13: @@
 On power-on, the system is frozen (via negation of the ACLO UNIBUS signal) for up to 451 msec while the entire memory is cleared, to prevent spurious ECC errors. For [[diagnostic]] purposes, the ECC can be disabled, and there are also means for the CPU to read/write the ECC bits directly.
-The board has provision to use battery backup power to retain data during a power outage. Configuration is by [[Dual Inline Package|DIP]] switches.
+The board has provision to use battery backup power to retain data during a power outage. Power requirements are 3.8-4.8A of +5V, 1.2-1.5A of +5VBB, 25-50mA of -12V (depending on size, i.e. number of MOS memory chips), and .55-1 A of +12 (when active; depending on size). Note that if two MS11-M boards are [[interleaving|interleaved]], the +12V current draw can be doubled.
 [[Category: UNIBUS Memories]]
 [[Category: EUB Memories]]

← Older revision		Revision as of 14:09, 22 January 2020
Line 1:		Line 1:
−	The '''MS11-M''' (M8722) is a [[Dynamic RAM\|DRAM]] [[main memory]] card; it can be configured as either [[UNIBUS]] memory, or [[Extended UNIBUS]].	+	The '''MS11-M''' (M8722) is a [[Metal Oxide Semiconductor\|MOS]] [[Dynamic RAM\|DRAM]] [[main memory]] card; it can be configured as either [[UNIBUS]] memory, or [[Extended UNIBUS]].

	When configured for UNIBUS use, it is plugged into an [[Modified UNIBUS Device\|MUD]] [[backplane]] slot. '''''Note:''''' The MS11-M uses power [[voltage]]s of +12V/-12V, unlike the normal +15V/-15V supplied by an MUD slot. In general, the MS11-M thus cannot actually be plugged into most MUD backplanes.		When configured for UNIBUS use, it is plugged into an [[Modified UNIBUS Device\|MUD]] [[backplane]] slot. '''''Note:''''' The MS11-M uses power [[voltage]]s of +12V/-12V, unlike the normal +15V/-15V supplied by an MUD slot. In general, the MS11-M thus cannot actually be plugged into most MUD backplanes.