Metal Oxide Semiconductor - Revision history

Jnc: +cat

2018-12-14T18:13:40Z

+cat

Dab: Not NPN but N-channel

2017-10-04T00:50:56Z

Not NPN but N-channel

Jnc: An OK start

2017-07-02T05:33:45Z

An OK start

New page

'''Metal Oxide Semiconductor''' (usually given as the acronym, '''MOS''') is a [[transistor]] family using [[field-effect transistor]]s. A subset of MOS, '''Complementary MOS''' (usually '''CMOS'''), built out of paired NPN and PNP MOS transistors, is now the most common form.

They are now not usually fabricated as discrete devices, but rather form the active elements in [[integrated circuit]]s. First used in [[dynamic RAM]] [[main memory]], they are now ubiquitously used in computers, due to their low power consumption, which reduces cooling issues.

The name is now something of a misnomer, as the basic material has always been silicon, and the insulating layers are no longer oxides, but dielectric materials chosen for specific properties.

← Older revision		Revision as of 18:13, 14 December 2018
Line 4:		Line 4:

	The name is now something of a misnomer, as the basic material has always been silicon, and the insulating layers are no longer oxides, but dielectric materials chosen for specific properties.		The name is now something of a misnomer, as the basic material has always been silicon, and the insulating layers are no longer oxides, but dielectric materials chosen for specific properties.
		+
		+	[[Category: Electronics]]

@@ Line 1: / Line 1: @@
-'''Metal Oxide Semiconductor''' (usually given as the acronym, '''MOS''') is a [[transistor]] family using [[field-effect transistor]]s. A subset of MOS, '''Complementary MOS''' (usually '''CMOS'''), built out of paired NPN and PNP MOS transistors, is now the most common form.
+'''Metal Oxide Semiconductor''' (usually given as the acronym, '''MOS''') is a [[transistor]] family using [[field-effect transistor]]s. A subset of MOS, '''Complementary MOS''' (usually '''CMOS'''), built out of paired N-channel and P-channel MOS transistors, is now the most common form.
 They are now not usually fabricated as discrete devices, but rather form the active elements in [[integrated circuit]]s. First used in [[dynamic RAM]] [[main memory]], they are now ubiquitously used in computers, due to their low power consumption, which reduces cooling issues.
 The name is now something of a misnomer, as the basic material has always been silicon, and the insulating layers are no longer oxides, but dielectric materials chosen for specific properties.