Difference between revisions of "MSV11-R memory module"
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* Switches S1-S2 sets bits 21-20 of the 22-bit starting [[address]]; | * Switches S1-S2 sets bits 21-20 of the 22-bit starting [[address]]; | ||
− | * DEC documentation asserts that switches S3-S4 must always be off; however they seem to be functional (although perhaps only for the single bank configuration), and set bits 19-18; | + | * DEC documentation asserts that switches S3-S4 must always be off; however they seem to be functional (although perhaps only for the single bank configuration), and set address bits 19-18; |
* Switches S5-S8 select the CSR address. | * Switches S5-S8 select the CSR address. | ||
Line 77: | Line 77: | ||
A copy of the engineering drawings for the MSV11-R has recently been discovered, in a set of [[PDP-11/84]] engineering drawings (see link below). | A copy of the engineering drawings for the MSV11-R has recently been discovered, in a set of [[PDP-11/84]] engineering drawings (see link below). | ||
As described above, each board has 2 banks in the array of DRAM chips; with 256K chips, each bank is thus 512KB. <!-- (Note that when writing data, the MSV11-R sends a 'write' [[signal]] to ''all'' the banks, and selects the one to ''actually'' use by use of the RAS signal. It's not certain why DEC did this, but since there is no explicit 'read' signal to the chip, and likely the outputs from all the banks are [[wire-OR]]'d together, use of RAS to select the desired bank works for read as well as write.)--> | As described above, each board has 2 banks in the array of DRAM chips; with 256K chips, each bank is thus 512KB. <!-- (Note that when writing data, the MSV11-R sends a 'write' [[signal]] to ''all'' the banks, and selects the one to ''actually'' use by use of the RAS signal. It's not certain why DEC did this, but since there is no explicit 'read' signal to the chip, and likely the outputs from all the banks are [[wire-OR]]'d together, use of RAS to select the desired bank works for read as well as write.)--> | ||
− | The chips in each bank run across the board (when it is oriented with the chip side facing the viewer, with the metal edging holding the handles at the top). Bit 0 (value 1) of the even byte of the low bank is on the right hand edge of the top row of the array; bit 15 (value 0100000), the top bit of the odd byte, is toward the left hand side of the second row. The two parity bits are on the extreme left hand edge. The high bank is in the third and fourth rows down the board from the metal handle edge.< | + | The chips in each bank run across the board (when it is oriented with the chip side facing the viewer, with the metal edging holding the handles at the top). Bit 0 (value 1) of the even byte of the low bank is on the right hand edge of the top row of the array; bit 15 (value 0100000), the top bit of the odd byte, is toward the left hand side of the second row. The two parity bits are on the extreme left hand edge. The high bank is in the third and fourth rows down the board from the metal handle edge. The full bit<->chip table is: |
{| class="wikitable" | {| class="wikitable" | ||
− | ! Bit !! Bank 0 !! Bank 1 | + | ! Bit !! Bank 0 !! Bank 1 |
|- | |- | ||
− | | 01 || | + | | 01 || E76 || E78 |
|- | |- | ||
− | | 02 || | + | | 02 || E83 || E85 |
|- | |- | ||
− | | 04 || | + | | 04 || E90 || E92 |
|- | |- | ||
− | | 10 || | + | | 10 || E94 || E96 |
|- | |- | ||
− | | 20 || | + | | 20 || E101 || E103 |
|- | |- | ||
− | | 40 || | + | | 40 || E108 || E110 |
|- | |- | ||
− | | 100 || | + | | 100 || E114 || E116 |
|- | |- | ||
− | | 200 || | + | | 200 || E121 || E123 |
|- | |- | ||
− | | 400 || | + | | 400 || E75 || E77 |
|- | |- | ||
− | | 1000 || | + | | 1000 || E82 || E84 |
|- | |- | ||
− | | 2000 || | + | | 2000 || E89 || E91 |
|- | |- | ||
− | | 4000 || | + | | 4000 || E93 || E95 |
|- | |- | ||
− | | 10000 || | + | | 10000 || E100 || E102 |
|- | |- | ||
− | | 20000 || | + | | 20000 || E107 || E109 |
|- | |- | ||
− | | 40000 || | + | | 40000 || E113 || E115 |
|- | |- | ||
− | | 100000 || | + | | 100000 || E120 || E122 |
|- | |- | ||
− | | Low byte Parity || | + | | Low byte Parity || E128 || E130 |
|- | |- | ||
− | | High byte Parity || | + | | High byte Parity || E127 || E129 |
− | |} | + | |} |
+ | |||
<!-- ''Note:'' When a DRAM chip is removed, if the affected memory location is then read, that bit will be ''high'' (1), not ''low'' (0); the affected input (apparently separate pins for the low and high banks) must float to 1 when there is no DRAM chip present to drive the input. --> | <!-- ''Note:'' When a DRAM chip is removed, if the affected memory location is then read, that bit will be ''high'' (1), not ''low'' (0); the affected input (apparently separate pins for the low and high banks) must float to 1 when there is no DRAM chip present to drive the input. --> | ||
The following 256K DRAM chips have been observed to be used: MB81256-15 (Fujitsu).<!-- M5K4164ANP-15P (Micron Technologies), NEC D4164C211 (NEC Electronics). <!-- HM50256-15 (Hitachi), TMS4256-15NL (Texas Instruments) | The following 256K DRAM chips have been observed to be used: MB81256-15 (Fujitsu).<!-- M5K4164ANP-15P (Micron Technologies), NEC D4164C211 (NEC Electronics). <!-- HM50256-15 (Hitachi), TMS4256-15NL (Texas Instruments) | ||
− | Note that some of these parts are 120 nsec parts, while others are 150 nsec; the faster parts do not seem to be necessary, or give any advantage. --> | + | Note that some of these parts are 120 nsec parts, while others are 150 nsec; the faster parts do not seem to be necessary, or give any advantage. |
+ | |||
+ | ==See also== --> | ||
==Further reading== | ==Further reading== |
Revision as of 23:04, 13 December 2020
The MSV11-R (M7458) is a quad-height QBUS/PMI DRAM main memory card.
NOTE: As a PMI card, it uses the CD interconnect; it can therefore only be plugged into a Q/CD backplane. Plugging an MSV11-R card into a regular Q/Q backplane will damage the MSV11-R.
The MSV111-RA (M7358-A) holds 1 MByte when fully populated with 256K DRAM chips. The memory is arranged as 2 banks, each 16 data bits (1 PDP-11 word) wide, with 2 additional bits for parity (1 per byte). In theory, it could support being half-populated (512 Kbytes), with only one bank; there is a jumper, W1, which seems to support this configuration, but no documentation for it. It is not clear if DEC ever sold that configuration.
It is a Q22 card, and apparently supports block mode.
Contents
Configuration
A single 8-position DIP switch configures the card:
- Switches S1-S2 sets bits 21-20 of the 22-bit starting address;
- DEC documentation asserts that switches S3-S4 must always be off; however they seem to be functional (although perhaps only for the single bank configuration), and set address bits 19-18;
- Switches S5-S8 select the CSR address.
S1 | S2 | Staring Address |
---|---|---|
OFF | OFF | 00000000 (0 MB) |
OFF | ON | 04000000 (1 MB) |
ON | OFF | 10000000 (2 MB) |
ON | ON | 14000000 (3 MB) |
Control Register
Each board has a single control register, which can be configured in the range 17772100-17772136.
S5 | S6 | S7 | S8 | CSR Address |
---|---|---|---|---|
ON | ON | ON | ON | 17772100 |
ON | ON | ON | OFF | 17772102 |
ON | ON | OFF | ON | 17772104 |
ON | ON | OFF | OFF | 17772106 |
ON | OFF | ON | ON | 17772110 |
ON | OFF | ON | OFF | 17772112 |
ON | OFF | OFF | ON | 17772114 |
ON | OFF | OFF | OFF | 17772116 |
OFF | ON | ON | ON | 17772120 |
OFF | ON | ON | OFF | 17772122 |
OFF | ON | OFF | ON | 17772124 |
OFF | ON | OFF | OFF | 17772126 |
OFF | OFF | ON | ON | 17772130 |
OFF | OFF | ON | OFF | 17772132 |
OFF | OFF | OFF | ON | 17772134 |
OFF | OFF | OFF | OFF | 17772136 |
Technical information
A copy of the engineering drawings for the MSV11-R has recently been discovered, in a set of PDP-11/84 engineering drawings (see link below). As described above, each board has 2 banks in the array of DRAM chips; with 256K chips, each bank is thus 512KB. The chips in each bank run across the board (when it is oriented with the chip side facing the viewer, with the metal edging holding the handles at the top). Bit 0 (value 1) of the even byte of the low bank is on the right hand edge of the top row of the array; bit 15 (value 0100000), the top bit of the odd byte, is toward the left hand side of the second row. The two parity bits are on the extreme left hand edge. The high bank is in the third and fourth rows down the board from the metal handle edge. The full bit<->chip table is:
Bit | Bank 0 | Bank 1 |
---|---|---|
01 | E76 | E78 |
02 | E83 | E85 |
04 | E90 | E92 |
10 | E94 | E96 |
20 | E101 | E103 |
40 | E108 | E110 |
100 | E114 | E116 |
200 | E121 | E123 |
400 | E75 | E77 |
1000 | E82 | E84 |
2000 | E89 | E91 |
4000 | E93 | E95 |
10000 | E100 | E102 |
20000 | E107 | E109 |
40000 | E113 | E115 |
100000 | E120 | E122 |
Low byte Parity | E128 | E130 |
High byte Parity | E127 | E129 |
The following 256K DRAM chips have been observed to be used: MB81256-15 (Fujitsu).
Further reading
- MSV11-R User Guide, EK-MSV1R-UG
External links
- PDP-11/84 Maintenance Print Set - Contains MSV11-R engineering drawings
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